mpxv2050 rev 0, 10/2010 freescale semiconductor ? freescale semiconductor, in c., 2010. all rights reserved. pressure 50 kpa on-chip temperature compensated and calibrated silicon pressure sensors the mpxv2050 series devices are silicon piezoresistive pressure sensors that provide a highly accurate and linear vo ltage output directly proportional to the applied pressure. a single, monolithic silicon diaphragm with the strain gauge and an integrated thin-film resistor network. precise span and offset calibration with temperature compensation are achieved by laser trimming. features ? temperature compensated over 0 c to +85 c ? ratiometric to supply voltage ordering information device name package options case no. # of ports pressure type device marking none single dual gauge differential absolute small outline package (mpxv2050 series) MPXV2050GP tray 1369 ? ? MPXV2050GP mpxv2050 series 0 to 50 kpa (0 to 7.25 psi) 40 mv full scale (typical) small outline package MPXV2050GP case 1369 application examples ? pump/motor control ? robotics ? level detectors ? medical diagnostics ? pressure switching ? blood pressure measurement
mpxv2050 sensors 2 freescale semiconductor pressure operating characteristics maximum ratings table 1. operating characteristics (v s = 10 v dc , t a = 25c unless otherwise noted, p1 > p2) characteristic symbol min typ max units pressure range (1) 1. 1.0 kpa (kilopascal) equals 0.145 psi. p op 0 ? 50 kpa supply voltage (2) 2. device is ratiometric within this specified excitation range. operating the device above the specified excitation range may i nduce additional error due to device self-heating. v s ? 10 16 v dc supply current i o ? 6.0 ? madc full scale span (3) 3. full scale span (v fss ) is defined as the algebraic difference between the output voltage at full rated pressure and the output voltage at the minimum rated pressure. v fs 38.5 40 41.5 mv offset (4) 4. offset (v off ) is defined as the output voltage at the minimum rated pressure. ? ?1.0 ? 1.0 mv sensitivity v/ p? 0.8 ?mv/kpa non-linearity ? ?0.3 ? 0.3 %v fs pressure hysteresis (0 to 50 kpa) ? ? 0.1 ? %v fs temperature hysteresis (-40 to 125c) ? ? 0.5 ? %v fs temperature coefficient of full scale tcv fs ?1.0 ? 1.0 %v fs temperature coefficient of offset tcv off ?1.0 ? 1.0 mv input impedance z in 1000 ? 2500 output impedance z out 1400 ? 3000 response time (5) (10% to 90%) 5. response time is defined as the time for the incremental c hange in the output to go from 10% to 90% of its final value when s ubjected to a specified step change in pressure. t r ? 1.0 ? ms warm-up time ? ? 20 ? ms offset stability (6) 6. offset stability is the product's output deviation when subjected to 1000 hours of pu lsed pressure, temperature cycling with bias test. ? ? 0.5 ? %v fs table 2. maximum ratings (1) rating max value unit supply voltage 16 v pressure (p1 > p2) 200 kpa storage temperature ?40 to +125 c operating temperature range ?40 to +125 c 1. exposure beyond the specified limits may c ause permanent damage or degradation to the device.
mpxv2050 sensors freescale semiconductor 3 pressure figure 1 shows a block diagram of the internal circuitry integrated on a pressure sensor chip. figure 1. temperature compensated pressure sensor schematic voltage output vs. appl ied differential pressure the differential voltage output of the sensor is directly proportional to the differential pressure applied. the output voltage of the differential or gauge sensor increases with increasing pressure applied to the pressure side relative to the vacuum side. similarly, output voltage increases as increasing vacuum is applied to the vacuum side relative to th e pressure side. on-chip temperature comp ensation and calibration figure 2 shows the minimum, maxi mum and typical output characteristics of the mpxv2050 series at 25 c. the output is directly proportional to the differential pressure and is essentially a straight line. a silicone gel isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the silicon diaphragm. figure 2. output vs. pressure differential v s 3 x-ducer sensing element thin film temperature compensation and calibration 2 4 v out+ v out- 1 gnd output (mvdc) kpa psi 40 35 30 25 15 10 5 0 -5 0 12.5 1.8 25 3.6 37.5 5.4 50 7.25 20 max typ min offset (typ) span range (typ) v s = 10 vdc t a = 25 c
mpxv2050 sensors 4 freescale semiconductor pressure linearity linearity refers to how well a transducer's output follows the equation: v out = v off + sensitivity x p over the operating pressure range. there are two basic methods for calculating nonlinearity: (1) end point straight line fit (see figure 3 ) or (2) a least squares best line fit. while a least squares fit gives the ?best case? linearity error (lower numerical value), the calculations required are burdensome. conversely, an end point fit will give the ?worst case? error (often more desirable in error budget calculations) and the calculations are more straightforward for the user. the specified pressure sensor linearities are based on the end point straight line method measured at the midrange pressure. figure 3. linearity specification comparison figure 4 illustrates the differenti al or gauge configuration in the basic chip carrier. a silic one gel isolates the die surface and wire bonds from the environment, while allowing the pressure signal to be transmitted to the silicon diaphragm. the mpxv2050 series pressure sensor operating characteristics and internal reliability and qualification tests are based on use of dry air as the pressure media. media other than dry air may have adverse effects on sensor performance and long term reliability. contact the factory for information regarding media compatibility in your application. refer to application note an3728, for more information regarding media compatibility. figure 4. sop package ? cross-sectional diagram (not to scale) relative voltage output pressure (% full scale) 0 50 100 end point straight line fit exaggerated performance least squares fit straight line offset least square deviation silicone gel die coat differential sensing element stainless steel cap p1 p2 die bond die thermoplastic case lead frame wire bond
mpxv2050 sensors freescale semiconductor 5 pressure package dimensions case 1369-01 issue b sop package page 1 of 2
mpxv2050 sensors 6 freescale semiconductor pressure package dimensions case 1369a-01 issue b sop package page 2 of 2
mpxv2050 rev. 0 10/2010 how to reach us: home page: www.freescale.com web support: http://www.freescale.com/support usa/europe or locations not listed: freescale semiconductor, inc. technical information center, el516 2100 east elliot road tempe, arizona 85284 1-800-521-6274 or +1-480-768-2130 www.freescale.com/support europe, middle east, and africa: freescale halbleiter deutschland gmbh technical information center schatzbogen 7 81829 muenchen, germany +44 1296 380 456 (english) +46 8 52200080 (english) +49 89 92103 559 (german) +33 1 69 35 48 48 (french) www.freescale.com/support japan: freescale semiconductor japan ltd. headquarters arco tower 15f 1-8-1, shimo-meguro, meguro-ku, tokyo 153-0064 japan 0120 191014 or +81 3 5437 9125 support.japan@freescale.com asia/pacific: freescale semiconductor china ltd. exchange building 23f no. 118 jianguo road chaoyang district beijing 100022 china +86 010 5879 8000 support.asia@freescale.com for literature requests only: freescale semiconductor lite rature distribution center p.o. box 5405 denver, colorado 80217 1-800-441-2447 or +1-303-675-2140 fax: +1-303-675-2150 ldcforfreescalesemiconductor@hibbertgroup.com information in this document is provided solely to enable system and software implementers to use freescale semiconduc tor products. there are no express or implied copyright licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document. freescale semiconductor reserves the right to make changes without further notice to any products herein. freescale semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does freescale semiconductor assume any liability ar ising out of the application or use of any product or circuit, and specifically discl aims any and all liability, including without limitation consequential or incidental damages. ?typical? parameters that may be provided in freescale semiconductor data s heets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including ?typicals?, must be validated for each customer application by customer?s technical experts. freescale se miconductor does not convey any license under its patent rights nor the rights of others. freescale semiconductor products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the fa ilure of the freescale semiconductor product could create a situation where personal injury or death may occur. should buyer purchase or use freescale semiconductor products for any such unintended or unauthorized application, buyer shall indemni fy and hold freescale semiconductor and its officers, employees, subsidiaries, affili ates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that freescale semiconductor was negligent regarding the design or manufacture of the part. freescale and the freescale logo are trademarks of freescale semiconductor, inc., reg. u.s. pat. & tm. off. all other product or service names are the property of their respective owners. ? freescale semiconductor, inc. 2010. all rights reserved.
|
